Improvement of Photovoltaic Cells Efficiency by Reducing Contamination in Single Chamber PECVD System by Passivation with a-Si:H and μc-Si:H Thin Films
Keywords:
a-Si:H, μc-Si:H, PECVD, contamination, solar cell
Abstract
High performance solar cells, deposited in a single chamber, can be obtained when low levels of contamination exists for the p-,i-,n- layers. This is a recurrent problem not only in the laboratories, but also in the industrial single chamber plasma enhanced chemical vapour deposition (PECVD) systems. In this paper an effective method of reducing the impurities, through the passivation with amorphous and nano/microcrystalline silicon thin film of the PECVD chamber walls, before and during the deposition of the solar cell layers is described.
References
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[2]. L. Raniero, S. Zhang, H. Águas, I. Ferreira, R. Igreja, E. Fortunato, R. Martins - Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHz, Thin Solid Films, Volume 487, Issues 1-2, 1 September 2005, Pages 170-173, 10.1016/j.tsf.2005.01.059.
[3]. X. D. Zhang, F. H. Sun, G. H. Wang, S. Z. Xu, C. C. Wei, G. F. Hou, J. Sun, S. Z. Xiong, X. H. Geng,and Y. Zhao - Effect of high crystalline p/i interface layer on the performance of microcrystalline silicon solar cells deposited in a single chamber system, Phys. Status Solidi C 7, No. 3–4, 1116–1119 (2010) / DOI 10.1002/pssc.200982764.
[4]. Wang Guang-Hong, Zhang Xiao-Dan, Xu Sheng-Zhi, Zheng Xin-Xia, Wei Chang-Chun, Sun Jian, Xiong Shao-Zhen, Geng Xin-Hua, and Zhao Ying, Reduction of the phosphorus contamination for plasma deposition of p i n microcrystalline silicon solar cells in a single chamber, Chin. Phys. B Vol. 19, No. 9 (2010) 098102.
[5]. L. Raniero - Produção e caracterização de células fotovoltaicas de silício nano-estruturado produzido por plasma de 27,12 MHz, Pages 92-94 PhD thesis, Universidade Nova de Lisboa, Faculdade de Ciências e Tecnologia, Lisboa (2006).
[6]. Hiroyuki Fujiwara - Spectroscopic Ellipsometry Principles and Applications, Pages 170-172, John Wiley & Sons Ltd, The Atrium, Southern Gate, Chichester, West Sussex PO19 8SQ, England (2007).
[7]. R. C. Chittick, J. H. Alexander, and H. F. Sterling - The Preparation and Properties of Amorphous Silicon, J. Electrochem. Soc. 116, 77 (1969).
[8]. J. Müllerová, P. Šutta, G. van Elzakker, M. Zeman, M. Mikula - Microstructure of hydrogenated silicon thin films prepared from silane diluted with hydrogen, Applied Surface Science, Volume 254, Issue 12, 15 April 2008, Pages 3690-3695, 10.1016/j.apsusc.2007.10.069.
[9]. R.E.I. Schropp, J.K. Rath, H. Li - Growth mechanism of nanocrystalline silicon at the phase transition and its application in thin film solar cells, Journal of Crystal Growth, Volume 311, Issue 3, 15 January 2009, Pages 760-764, 10.1016/j.jcrysgro.2008.09.155.
[10]. Xiaodan Zhang, Guanghong Wang, Xinxia Zheng, Changchun Wei, Xinhua Geng, Shaozhen Xiong, Ying Zhao - A pre-hydrogen glow method to improve the reproducibility of intrinsic microcrystalline silicon thin film depositions in a singlechamber system, Solar Energy Materials and Solar Cells, Volume 95, Issue 8, August 2011, Pages 2448-2453.
Published
2011-12-15
How to Cite
1.
DIACONU B, VICENTE A, MUSAT V, MARTINS R. Improvement of Photovoltaic Cells Efficiency by Reducing Contamination in Single Chamber PECVD System by Passivation with a-Si:H and μc-Si:H Thin Films. The Annals of “Dunarea de Jos” University of Galati. Fascicle IX, Metallurgy and Materials Science [Internet]. 15Dec.2011 [cited 29Apr.2024];34(4):37-0. Available from: https://www.gup.ugal.ro/ugaljournals/index.php/mms/article/view/2921
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