High-K Dielectric Inorganic-Organic Hybrid Thin Films for Field Effect Transistors (FETFT)
Abstract
The paper discusses the challenges to develop thin films transistors for flexible transparent electronics, displays etc. The sol-gel preparation of hybrid thin films based on dielectric oxides nanoparticles (SiO2 NPs, ZrO2 NPs) and polymethy methacrylate (PMMA) is presented. The high-k hybrid thin films, evaluated as gate dielectric in a MIM structures, were deposed by spin-coating teqhnique. The multilayers (thin films) configuration of MIM structures were investigated by scanning electron microscopy (SEM) and electrical properties. The I-V and C-V curves showed a better dielectric behavior of hybrid films with respect to the simple PMMA films. Dielectric constant values of 2.1, 3.4 and 5.4 have been obtained for PMMA, ZrO2-PMMA and SiO2-PMMA films, respectively.
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Literaturhinweise
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