On the Kinetics of Sol Gel Al:ZnO Thin Films Crystallization on Silicon Substrate
Abstract
Recently, there is a growing interest in applying ZnO thin films on silicon buffer substrates for p-n junction devices, optical wave guide, etc.
A sol gel process is very attractive technique for obtaining oxide thin films, due to easy control of film composition, easy fabrication of large area thin films with low cost and the ability to coat-specific shapes substrates.
This paper presents a kinetic investigation of the crystallization (550-650 oC) of high preferential c-axis oriented ZnO thin films on p-type (100) silicon wafer substrate, from XRD data.
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Literaturhinweise
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[2]. M. Ohyama, J. Am. Ceram. 81 (1998) 1622.
[3]. D. Bao, H. Gu, A. Kuang, Thin Solid Films 312 (1998) 37.
[4]. J.F. Chang, W.C. Lin, M.H. Hon, Applied Surface Sci. 183 (2001) 18.
[5]. E. Fortunato, P. Nunes, A. Marques, D. Costa, H. Aguas, I. Ferreira, M.E.V. da Costa, M.H. Godinho, P.L. Almeida, R. Martins, Adv. Eng. Mater. 4 ( 2002) 610.
[6]. M. Purica, E. Budianu, E. Rusu, , Thin Solid Films, vol. 383, 2001, p. 283.
[7]. F.C.M. Van de Pol, Ceram Bull., 69 (1990) 1959.
[8]. Z. Q. Xu, H. Deng, J. Xie, Y. Li and X.T. Zu, Appl. Surf. Sci. (2006, in press, www.sciencedirect.com).
[9]. H. Otha and H. Hosono, Mater. Today 7(2004) 42.
[10]. T.H. Moon, M.C. Jeong, W. Lee and J.M. Myoung, Appl. Surf. Sci. 240 (2005) 280.
[11]. Y.C. Lee et al, Appl. Surf. Sci. 249 (2005) 91.
[12]. S.Y. Kuo et al, Journal of Crystal Growth, 285 (2006) 78-84.
[13]. W.C. Kwak and Y.M. Sung., J. Mater. Res., 17(2002), 1463.
[14]. I. M. Sung, J. Mater. Res., 7(2001), 2039.
[15]. Z. Huang, Q. Zhuang and E.W. Whatmore, J. Appl. Phys., 86 (1999), 1662.
[16]. Z. Huang , Q. Zhuang and E.W. Whatmore, J. Appl. Phys., 85 (1999), 7355.
[17]. G.J. Exarhos and.M. Aloi, Thin Solid Films, 193 (1990), 42.
Veröffentlicht
2006-11-15
Zitationsvorschlag
1.
MUŞAT V, CANEJO J, ITICESCU C. On the Kinetics of Sol Gel Al:ZnO Thin Films Crystallization on Silicon Substrate. The Annals of “Dunarea de Jos” University of Galati. Fascicle IX, Metallurgy and Materials Science [Internet]. 15Nov.2006 [zitiert 1Juli2025];29(2):27-0. Available from: https://www.gup.ugal.ro/ugaljournals/index.php/mms/article/view/3199
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